2cl 8 0kv/0.2 a 0. 2 a 8 0 kv -- high voltage silicon rectifier stack gete electronic co.,ltd http://www.getedz.com http://www.hvgtsemi.com e - mai: sales@getedz.com getai electronic device co.,ltd tel:0086 - 20 - 81 84 9628 fax:0086 - 20 - 8184 9638 2016 1 / 1 maximum ratings and characteristics : ( absolute maximum ratings ) items symbols condition data v alue units repetitive peak renerse voltage v rrm ta=25c ; 8 0 kv average output current i f ta=25c ; resistive load 200 m a suege current i fsm ta=25c ; 8.3 m s 6 .0 a junction temperature t j - 40 ~ + 1 25 c allowable operation case temperature tc 125 c storage temperature t stg - 40 ~ + 1 25 c electrical characteristics: ta=25c ( unless otherwise specified ) items symbols condition data value units maximum forward voltage drop v f at 25c ; i f =i f (av) 9 6 v maximum reverse current i r 1 at 25c ; v r =v rrm 5.0 ua i r 2 at 100c ; v r =v rrm 5 0 ua maximum reverse recovery time t rr a t 25c ; i f = 0.5i r ; i r = i favm ; i rr =0.25i r -- ns junction capacitance c j at 25c ; v r =0v ; f=1mhz -- pf hvgt high voltage silicon rectifier is made of high quality glass passivated chip and high reliability epoxy resin sealing structure, and through professional testing equipment inspection qualified after to customers. shape display: s ize: (unit:mm) hvgt name : hvs - 080960h f eatures: 1. high reliability design . 2. high voltage design . 3. power frequency ratio . 4. conform to rohs . 5. epoxy resin molded in vacuumhave anticorrosion in the surface . a pplications: 1. ignition device power supply . 2. microwave emission power . 3. general purpose high voltage rectifier . mechanical data: 1. case : epoxy resin molding. 2. t erminal: external lead. 3. net weight : 7.0 grams (approx) .
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